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One-day Symposium on 3rd Generation Semiconductor

Date, time & venue

2019-09-26;9:00 am to 5:30 pm;Grand Hall A, Phase 3, of the Hong Kong Science Park


All Electronics Division members of HKIE and their colleagues are cordially invited to attend a one-day Symposium on 3rd Generation Semiconductor on 26 September 2019 (Thursday).  This event will be held at Grand Hall A, Phase 3, of the Hong Kong Science Park from 9:00 am to 5:30 pm.  

Third-generation semiconductor materials generally refer to Gallium Nitride, Silicon Carbide, or other semiconductors that have a relatively wide bandgap (2 to 4 eV), compared to conventional semiconductor materials like silicon (1 to 1.5 eV).  Devices made by wide bandgap semiconductors can operate at much higher voltages, frequencies and temperatures than those made by conventional semiconductors.  These properties enable their widespread applications in consumer and industrial electronics, clean transportation, smart grid and alternative energy applications.  Their inherent advantages in many applications, combined with the unique properties not found in conventional semiconductors, have attracted considerable attention from governments, industries, and research communities worldwide.

This Symposium is jointly organized by Chinese University of Hong Kong, City University of Hong Kong, Hong Kong University of Science and Technology, Hong Kong Science and Technology Park, and IEEE Hong Kong Section.  HKIE is a Supporting Organization of the Symposium.  For this event, we invite top researchers and industrialists from Asia, Europe, and U.S. to come to Hong Kong to discuss the current status of the technology and its future development.  Topics include but not limited to practical applications of GaN, SiC, photonics materials and devices.

Detailed rundown of the event and the registration form are provided in the following URL:




There is no registration fee and buffet lunch is provided for all registered participants. Please register for your participation as early as possible.  





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