All Electronics Division members of HKIE and
their colleagues are cordially invited to attend a one-day Symposium on 3rd
Generation Semiconductor on 26 September 2019 (Thursday). This event will
be held at Grand Hall A, Phase 3, of the Hong Kong Science Park from 9:00 am to
5:30 pm.
Third-generation semiconductor materials
generally refer to Gallium Nitride, Silicon Carbide, or other semiconductors
that have a relatively wide bandgap (2 to 4 eV), compared to conventional
semiconductor materials like silicon (1 to 1.5 eV). Devices made by wide
bandgap semiconductors can operate at much higher voltages, frequencies and
temperatures than those made by conventional semiconductors. These
properties enable their widespread applications in consumer and industrial
electronics, clean transportation, smart grid and alternative energy
applications. Their inherent advantages in many applications, combined
with the unique properties not found in conventional semiconductors, have
attracted considerable attention from governments, industries, and research
communities worldwide.
This Symposium is jointly organized by Chinese
University of Hong Kong, City University of Hong Kong, Hong Kong University of
Science and Technology, Hong Kong Science and Technology Park, and IEEE Hong
Kong Section. HKIE is a Supporting Organization of the
Symposium. For this event, we invite
top researchers and industrialists from Asia, Europe, and U.S. to come to Hong
Kong to discuss the current status of the technology and its future
development. Topics include but not limited to practical applications of
GaN, SiC, photonics materials and devices.
Detailed rundown of the event and the registration form are
provided in the following URL:
https://app.micepad.co/pages/#/register/2019Symposiumin3rdGenerationSemiconductor
There is no registration fee and buffet lunch is provided for
all registered participants. Please register for your participation as early as
possible.